2N6436 2n6437 2n6438 document number 3252 issue 3 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. description designed for use in industrial - military power amplifier and switching circuit applications absolute maximum ratings (t case = 25c unless otherwise stated) high power pnp silicon transistors v cb collector ? base voltage v ceo collector ? emitter voltage v eb emitter ? base voltage i c collector current continuous peak i b base current p d total device dissipation at t case = 25c derate above 25c t stg, t j operating and storage temperature range 6.0v 25a 50a 10a 140w 0.8w/c ?65 to +200c mechanical data dimensions in mm (inches) 12 3 (case) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 3.84 (0.151) 4.09 (0.161) 0.97 (0.060) 1.10 (0.043) 7.92 (0.312) 12.70 (0.50) 22.23 (0.875) max. 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) to-3 package (to-204aa) pin 1 ? base pin 2 ? emitter case ? collector 2N6436 2n6437 2n6438 100 80 120 100 140 120
2N6436 2n6437 2n6438 document number 3252 issue 3 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. r thj-case 1.25 thermal resistance junction-case max c/w thermal data parameter test conditions min. typ. max. unit a a a ma a ma a ma a v ? v mhz pf s 10 10 10 100 10 1.0 10 1.0 10 1.0 50 50 50 80 100 120 30 20 120 12 1.0 1.8 1.8 2.5 40 700 0.3 1.0 0.25 i cbo i ebo i cex i ceo v (br)ceo * h fe* v ce(sat) * v be(sat) * f t c ob t r t s t f collector cut off current emitter cut off current collector cut off current collector cut off current collector emitter breakdown voltage dc current gain collector - emitter saturation voltage base emitter saturation voltage current gain - bandwidth product output capacitance rise time storage fall time v cb = 100v i e = 0 2N6436 v cb = 120v i e = 0 2n6437 v cb = 140v i e = 0 2n6438 v eb = 6v i c = 0 v ce = 90v 2N6436 v be (off) =-1.5v t c = 150c v ce = 110v 2n6437 v be (off) =-1.5v t c = 150c v ce = 130v 2N6436 v be (off) =-1.5v t c = 150c v ce = 40v i b = 0 2N6436 v ce = 50v i b = 0 2n6437 v ce = 60v i b = 0. 2n6438 2N6436 i c = 50ma i b = 0 2n6437 2n6438 v ce =2.0v i c = 0.5a v ce = 2.0v i c = 10a v ce = 2.0v i c = 25a i c = 10a i b = 1.0a i c = 25a i b = 2.5a i c = 10a i b = 1.0av i c = 25a i b = 2.5a i c = 1.0a v ce = 10v f test = 10mhz i e = 0a v ce = 10v f = 100khz v cc = 80v i c = 10a v be(off) = 6.0v i b1 = 1.0a v cc = 80v i c = 10a v be(off) = 6.0v i b1 = i b2 =1.0a electrical characteristics for (t case = 25c unless otherwise stated) * pulse test: pulse width 300 s , duty cycle 2.0%
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